13.19 Mos3: Level 3 MOSfet model with Meyer capacitance model
------------------------------------------------------------
| Mos3 - instance parameters (input-only) |
|-----------------------------------------------------------+
| off Device initially off |
------------------------------------------------------------
------------------------------------------------------------
| Mos3 - instance parameters (input-output) |
|-----------------------------------------------------------+
| m Multiplicity |
| l Length |
| w Width |
| ad Drain area |
| as Source area |
------------------------------------------------------------+
| pd Drain perimeter |
| ps Source perimeter |
| nrd Drain squares |
| nrs Source squares |
|-----------------------------------------------------------+
| icvds Initial D-S voltage |
| icvgs Initial G-S voltage |
| icvbs Initial B-S voltage |
| ic Vector of D-S, G-S, B-S voltages |
| temp Instance operating temperature |
------------------------------------------------------------
------------------------------------------------------------
| Mos3 - instance parameters (output-only) |
|-----------------------------------------------------------+
| id Drain current |
| cd Drain current |
| ibd B-D junction current |
| ibs B-S junction current |
------------------------------------------------------------
| is Source current |
| ig Gate current |
| ib Bulk current |
| vgs Gate-Source voltage |
|-----------------------------------------------------------+
| vds Drain-Source voltage |
| vbs Bulk-Source voltage |
| vbd Bulk-Drain voltage |
| dnode Number of drain node |
------------------------------------------------------------
| gnode Number of gate node |
| snode Number of source node |
| bnode Number of bulk node |
| dnodeprime Number of internal drain node |
| snodeprime Number of internal source node |
| continued |
------------------------------------------------------------
--------------------------------------------------------------
| Mos3 - instance output-only parameters - continued
|-------------------------------------------------------------+
|von Turn-on voltage |
|vdsat Saturation drain voltage |
|sourcevcrit Critical source voltage |
|drainvcrit Critical drain voltage |
--------------------------------------------------------------
|rs Source resistance |
|sourceconductanceSource conductance |
|rd Drain resistance |
|drainconductance Drain conductance |
|-------------------------------------------------------------+
|gm Transconductance |
|gds Drain-Source conductance |
|gmb Bulk-Source transconductance |
|gmbs Bulk-Source transconductance |
--------------------------------------------------------------
|gbd Bulk-Drain conductance |
|gbs Bulk-Source conductance |
|cbd Bulk-Drain capacitance |
|cbs Bulk-Source capacitance |
|-------------------------------------------------------------+
|cgs Gate-Source capacitance |
|cgd Gate-Drain capacitance |
|cgb Gate-Bulk capacitance |
cqgs Capacitance due to gate-source charge storage
| |
--------------------------------------------------------------
|cqgd Capacitance due to gate-drain charge storage|
|cqgb Capacitance due to gate-bulk charge storage |
|cqbd Capacitance due to bulk-drain charge storage|
|cqbs Capacitance due to bulk-source charge storage
|-------------------------------------------------------------+
|cbd0 Zero-Bias B-D junction capacitance |
|cbdsw0 Zero-Bias B-D sidewall capacitance |
|cbs0 Zero-Bias B-S junction capacitance |
|cbssw0 Zero-Bias B-S sidewall capacitance |
--------------------------------------------------------------
|qbs Bulk-Source charge storage |
|qgs Gate-Source charge storage |
|qgd Gate-Drain charge storage |
|qgb Gate-Bulk charge storage |
|qbd Bulk-Drain charge storage |
|p Instantaneous power |
--------------------------------------------------------------
------------------------------------------------------------
| Mos3 - model parameters (input-only) |
|-----------------------------------------------------------+
| nmos N type MOSfet model |
| pmos P type MOSfet model |
------------------------------------------------------------
------------------------------------------------------------
| Mos3 - model parameters (input-output) |
|-----------------------------------------------------------+
| vto Threshold voltage |
| vt0 (null) |
| kp Transconductance parameter |
| gamma Bulk threshold parameter |
------------------------------------------------------------
| phi Surface potential |
| rd Drain ohmic resistance |
| rs Source ohmic resistance |
| cbd B-D junction capacitance |
|-----------------------------------------------------------+
| cbs B-S junction capacitance |
| is Bulk junction sat. current |
| pb Bulk junction potential |
| cgso Gate-source overlap cap. |
------------------------------------------------------------
| cgdo Gate-drain overlap cap. |
| cgbo Gate-bulk overlap cap. |
| rsh Sheet resistance |
| cj Bottom junction cap per area |
|-----------------------------------------------------------+
| mj Bottom grading coefficient |
| cjsw Side junction cap per area |
| mjsw Side grading coefficient |
| js Bulk jct. sat. current density |
------------------------------------------------------------
| tox Oxide thickness |
| xl Length mask adjustment |
| wd Width Narrowing (Diffusion) |
| xw Width mask adjustment |
| ld Lateral diffusion |
| u0 Surface mobility |
| uo (null) |
|-----------------------------------------------------------+
| fc Forward bias jct. fit param. |
| nsub Substrate doping |
| tpg Gate type |
| nss Surface state density |
------------------------------------------------------------
| vmax Maximum carrier drift velocity |
| xj Junction depth |
| nfs Fast surface state density |
| xd Depletion layer width |
|-----------------------------------------------------------+
| alpha Alpha |
| eta Vds dependence of threshold voltage |
| delta Width effect on threshold |
| input_delta (null) |
------------------------------------------------------------
| theta Vgs dependence on mobility |
| kappa Kappa |
| tnom Parameter measurement temperature |
| kf Flicker noise coefficient |
| af Flicker noise exponent |
------------------------------------------------------------
------------------------------------------------------------
| Mos3 - model parameters (output-only) |
|-----------------------------------------------------------+
| type N-channel or P-channel MOS |
------------------------------------------------------------