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13.17 Mos1: Level 1 MOSfet model with Meyer capacitance model

     
      ------------------------------------------------------------
     |          Mos1 - instance parameters (input-only)          |
     |-----------------------------------------------------------+
     | off               Device initially off                    |
     | ic                Vector of D-S, G-S, B-S voltages        |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |         Mos1 - instance parameters (input-output)         |
     |-----------------------------------------------------------+
     | m                 Multiplicity
     | l                 Length                                  |
     | w                 Width                                   |
     | ad                Drain area                              |
     | as                Source area                             |
      ------------------------------------------------------------
     | pd                Drain perimeter                         |
     | ps                Source perimeter                        |
     | nrd               Drain squares                           |
     | nrs               Source squares                          |
     |-----------------------------------------------------------+
     | icvds             Initial D-S voltage                     |
     | icvgs             Initial G-S voltage                     |
     | icvbs             Initial B-S voltage                     |
     | temp              Instance temperature                    |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |          Mos1 - instance parameters (output-only)         |
     |-----------------------------------------------------------+
     | id                Drain current                           |
     | is                Source current                          |
     | ig                Gate current                            |
     | ib                Bulk current                            |
      ------------------------------------------------------------
     | ibd               B-D junction current                    |
     | ibs               B-S junction current                    |
     | vgs               Gate-Source voltage                     |
     | vds               Drain-Source voltage                    |
     |-----------------------------------------------------------+
     | vbs               Bulk-Source voltage                     |
     | vbd               Bulk-Drain voltage                      |
     | dnode             Number of the drain node                |
     | gnode             Number of the gate node                 |
      ------------------------------------------------------------
     | snode             Number of the source node               |
     | bnode             Number of the node                      |
     | dnodeprime        Number of int. drain node               |
     | snodeprime        Number of int. source node              |
     |-----------------------------------------------------------+
     | von                                                       |
     | vdsat             Saturation drain voltage                |
     | sourcevcrit       Critical source voltage                 |
     | drainvcrit        Critical drain voltage                  |
     | rs                Source resistance                       |
     |                         continued                         |
      ------------------------------------------------------------
     
     
      --------------------------------------------------------------
     |      Mos1 - instance output-only parameters - continued
     |-------------------------------------------------------------+
     |sourceconductanceConductance of source                       |
     |rd               Drain conductance                           |
     |drainconductance Conductance of drain                        |
     |gm               Transconductance                            |
      --------------------------------------------------------------
     |gds              Drain-Source conductance                    |
     |gmb              Bulk-Source transconductance                |
     |gmbs                                                         |
     |gbd              Bulk-Drain conductance                      |
     |-------------------------------------------------------------+
     |gbs              Bulk-Source conductance                     |
     |cbd              Bulk-Drain capacitance                      |
     |cbs              Bulk-Source capacitance                     |
     |cgs              Gate-Source capacitance                     |
      --------------------------------------------------------------
     |cgd              Gate-Drain capacitance                      |
     |cgb              Gate-Bulk capacitance                       |
     |cqgs             Capacitance due to gate-source charge storage
     |cqgd             Capacitance due to gate-drain charge storage|
     |-------------------------------------------------------------+
     |cqgb             Capacitance due to gate-bulk charge storage |
     |cqbd             Capacitance due to bulk-drain charge storage|
      cqbs             Capacitance due to bulk-source charge storage
     |cbd0             Zero-Bias B-D junction capacitance          |
      --------------------------------------------------------------
     |cbdsw0                                                       |
     |cbs0             Zero-Bias B-S junction capacitance          |
     |cbssw0                                                       |
     |qgs              Gate-Source charge storage                  |
     |-------------------------------------------------------------+
     |qgd              Gate-Drain charge storage                   |
     |qgb              Gate-Bulk charge storage                    |
     |qbd              Bulk-Drain charge storage                   |
     |qbs              Bulk-Source charge storage                  |
     |p                Instaneous power                            |
      --------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |            Mos1 - model parameters (input-only)           |
     |-----------------------------------------------------------+
     | nmos              N type MOSfet model                     |
     | pmos              P type MOSfet model                     |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |           Mos1 - model parameters (input-output)          |
     |-----------------------------------------------------------+
     | vto               Threshold voltage                       |
     | vt0               (null)                                  |
     | kp                Transconductance parameter              |
     | gamma             Bulk threshold parameter                |
      ------------------------------------------------------------
     | phi               Surface potential                       |
     | lambda            Channel length modulation               |
     | rd                Drain ohmic resistance                  |
     |                         continued                         |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |      Mos1 - model input-output parameters - continued
     |-----------------------------------------------------------+
     | rs                Source ohmic resistance                 |
     | cbd               B-D junction capacitance                |
     | cbs               B-S junction capacitance                |
     | is                Bulk junction sat. current              |
      ------------------------------------------------------------
     | pb                Bulk junction potential                 |
     | cgso              Gate-source overlap cap.                |
     | cgdo              Gate-drain overlap cap.                 |
     | cgbo              Gate-bulk overlap cap.                  |
     |-----------------------------------------------------------+
     | rsh               Sheet resistance                        |
     | cj                Bottom junction cap per area            |
     | mj                Bottom grading coefficient              |
     | cjsw              Side junction cap per area              |
      ------------------------------------------------------------
     | mjsw              Side grading coefficient                |
     | js                Bulk jct. sat. current density          |
     | tox               Oxide thickness                         |
     | ld                Lateral diffusion                       |
     |-----------------------------------------------------------+
     | u0                Surface mobility                        |
     | uo                (null)                                  |
     | fc                Forward bias jct. fit param.           |
     | nsub              Substrate doping                        |
      ------------------------------------------------------------
     | tpg               Gate type                               |
     | nss               Surface state density                   |
     | tnom              Parameter measurement temperature       |
     | kf                Flicker noise coefficient               |
     | af                Flicker noise exponent                  |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |           Mos1 - model parameters (output-only)           |
     |-----------------------------------------------------------+
     | type              N-channel or P-channel MOS              |
      ------------------------------------------------------------