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------------------------------------------------------------ | JFET - instance parameters (input-output) | |-----------------------------------------------------------+ | off Device initially off | | ic Initial VDS,VGS vector | | area Area factor | | ic-vds Initial D-S voltage | | ic-vgs Initial G-S volrage | | temp Instance temperature | ------------------------------------------------------------ --------------------------------------------------------------- | JFET - instance parameters (output-only) | |--------------------------------------------------------------+ |drain-node Number of drain node | |gate-node Number of gate node | |source-node Number of source node | |drain-prime-node Internal drain node | --------------------------------------------------------------- |source-prime-nodeInternal source node | |vgs Voltage G-S | |vgd Voltage G-D | |ig Current at gate node | |--------------------------------------------------------------+ |id Current at drain node | |is Source current | |igd Current G-D | |gm Transconductance | --------------------------------------------------------------- |gds Conductance D-S | |ggs Conductance G-S | |ggd Conductance G-D | |qgs Charge storage G-S junction | |--------------------------------------------------------------+ |qgd Charge storage G-D junction | cqgs Capacitance due to charge storage G-S junction | | cqgd Capacitance due to charge storage G-D junction |p Power dissipated by the JFET | --------------------------------------------------------------- ------------------------------------------------------------ | JFET - model parameters (input-output) | |-----------------------------------------------------------+ | njf N type JFET model | | pjf P type JFET model | | vt0 Threshold voltage | | vto (null) | ------------------------------------------------------------ | beta Transconductance parameter | | lambda Channel length modulation param. | | rd Drain ohmic resistance | | rs Source ohmic resistance | | cgs G-S junction capacitance | | continued | ------------------------------------------------------------ ------------------------------------------------------------ | JFET - model input-output parameters - continued |-----------------------------------------------------------+ | cgd G-D junction cap | | pb Gate junction potential | | is Gate junction saturation current | | fc Forward bias junction fit param. | ------------------------------------------------------------ | b Doping tail parameter | | tnom parameter measurement temperature | | kf Flicker Noise Coefficient | | af Flicker Noise Exponent | ------------------------------------------------------------ ------------------------------------------------------------ | JFET - model parameters (output-only) | |-----------------------------------------------------------+ | type N-type or P-type JFET model | | gd Drain conductance | | gs Source conductance | ------------------------------------------------------------