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13.14 JFET: Junction Field effect transistor

     
      ------------------------------------------------------------
     |         JFET - instance parameters (input-output)         |
     |-----------------------------------------------------------+
     | off               Device initially off                    |
     | ic                Initial VDS,VGS vector                  |
     | area              Area factor                             |
     | ic-vds            Initial D-S voltage                     |
     | ic-vgs            Initial G-S volrage                     |
     | temp              Instance temperature                    |
      ------------------------------------------------------------
     
     
      ---------------------------------------------------------------
     |           JFET - instance parameters (output-only)           |
     |--------------------------------------------------------------+
     |drain-node       Number of drain node                         |
     |gate-node        Number of gate node                          |
     |source-node      Number of source node                        |
     |drain-prime-node Internal drain node                          |
      ---------------------------------------------------------------
     |source-prime-nodeInternal source node                         |
     |vgs              Voltage G-S                                  |
     |vgd              Voltage G-D                                  |
     |ig               Current at gate node                         |
     |--------------------------------------------------------------+
     |id               Current at drain node                        |
     |is               Source current                               |
     |igd              Current G-D                                  |
     |gm               Transconductance                             |
      ---------------------------------------------------------------
     |gds              Conductance D-S                              |
     |ggs              Conductance G-S                              |
     |ggd              Conductance G-D                              |
     |qgs              Charge storage G-S junction                  |
     |--------------------------------------------------------------+
     |qgd              Charge storage G-D junction                  |
      cqgs             Capacitance due to charge storage G-S junction
     |                                                              |
      cqgd             Capacitance due to charge storage G-D junction
     |p                Power dissipated by the JFET                 |
      ---------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |           JFET - model parameters (input-output)          |
     |-----------------------------------------------------------+
     | njf               N type JFET model                       |
     | pjf               P type JFET model                       |
     | vt0               Threshold voltage                       |
     | vto               (null)                                  |
      ------------------------------------------------------------
     | beta              Transconductance parameter              |
     | lambda            Channel length modulation param.        |
     | rd                Drain ohmic resistance                  |
     | rs                Source ohmic resistance                 |
     | cgs               G-S junction capacitance                |
     |                         continued                         |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |      JFET - model input-output parameters - continued
     |-----------------------------------------------------------+
     | cgd               G-D junction cap                        |
     | pb                Gate junction potential                 |
     | is                Gate junction saturation current        |
     | fc                Forward bias junction fit param.        |
      ------------------------------------------------------------
     | b                 Doping tail parameter                   |
     | tnom              parameter measurement temperature       |
     | kf                Flicker Noise Coefficient               |
     | af                Flicker Noise Exponent                  |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |           JFET - model parameters (output-only)           |
     |-----------------------------------------------------------+
     | type              N-type or P-type JFET model             |
     | gd                Drain conductance                       |
     | gs                Source conductance                      |
      ------------------------------------------------------------