13.10 Diode: Junction Diode model
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| Diode - instance parameters (input-output) |
|-----------------------------------------------------------+
| off Initially off |
| temp Instance temperature |
| ic Initial device voltage |
| area Area factor |
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| Diode - instance parameters (output-only) |
|-----------------------------------------------------------+
| vd Diode voltage |
| id Diode current |
| c Diode current |
| gd Diode conductance |
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| cd Diode capacitance |
| charge Diode capacitor charge |
| capcur Diode capacitor current |
| p Diode power |
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| Diode - model parameters (input-only) |
|-----------------------------------------------------------+
| d Diode model |
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| Diode - model parameters (input-output) |
|-----------------------------------------------------------+
| is Saturation current |
| tnom Parameter measurement temperature |
| rs Ohmic resistance |
| n Emission Coefficient |
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| tt Transit Time |
| cjo Junction capacitance |
| cj0 (null) |
| vj Junction potential |
|-----------------------------------------------------------+
| m Grading coefficient |
| eg Activation energy |
| xti Saturation current temperature exp. |
| kf flicker noise coefficient |
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| af flicker noise exponent |
| fc Forward bias junction fit parameter |
| bv Reverse breakdown voltage |
| ibv Current at reverse breakdown voltage |
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| Diode - model parameters (output-only) |
|-----------------------------------------------------------+
| cond Ohmic conductance |
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