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13.3 BJT: Bipolar Junction Transistor

     
      ------------------------------------------------------------
     |           BJT - instance parameters (input-only)          |
     |-----------------------------------------------------------+
     | ic                Initial condition vector                |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |          BJT - instance parameters (input-output)         |
     |-----------------------------------------------------------+
     | off               Device initially off                    |
     | icvbe             Initial B-E voltage                     |
     | icvce             Initial C-E voltage                     |
     | area              Area factor                             |
     | temp              instance temperature                    |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |          BJT - instance parameters (output-only)          |
     |-----------------------------------------------------------+
     | colnode           Number of collector node                |
     | basenode          Number of base node                     |
     | emitnode          Number of emitter node                  |
     | substnode         Number of substrate node                |
      ------------------------------------------------------------
     | colprimenode      Internal collector node                 |
     | baseprimenode     Internal base node                      |
     | emitprimenode     Internal emitter node                   |
     | ic                Current at collector node               |
     |-----------------------------------------------------------+
       ib                Current at base node
     | ie                Emitter current                         |
     | is                Substrate current                       |
     | vbe               B-E voltage                             |
      ------------------------------------------------------------
     | vbc               B-C voltage                             |
     | gm                Small signal transconductance           |
     | gpi               Small signal input conductance - pi     |
     | gmu               Small signal conductance - mu           |
     |-----------------------------------------------------------+
     | gx                Conductance from base to internal base  |
     | go                Small signal output conductance         |
     | geqcb             d(Ibe)/d(Vbc)                           |
     | gccs              Internal C-S cap. equiv. cond.          |
      ------------------------------------------------------------
     | geqbx             Internal C-B-base cap. equiv. cond.     |
     | cpi               Internal base to emitter capactance     |
     | cmu               Internal base to collector capactiance  |
     | cbx               Base to collector capacitance           |
     |-----------------------------------------------------------+
     | ccs               Collector to substrate capacitance      |
     | cqbe              Cap. due to charge storage in B-E jct.  |
     | cqbc              Cap. due to charge storage in B-C jct.  |
     | cqcs              Cap. due to charge storage in C-S jct.  |
     | cqbx              Cap. due to charge storage in B-X jct.  |
     |                         continued                |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |     BJT - instance output-only parameters - continued
     |-----------------------------------------------------------+
     | cexbc             Total Capacitance in B-X junction       |
     | qbe               Charge storage B-E junction             |
     | qbc               Charge storage B-C junction             |
     | qcs               Charge storage C-S junction             |
     | qbx               Charge storage B-X junction             |
     | p                 Power dissipation                       |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |           BJT - model parameters (input-output)           |
     |-----------------------------------------------------------+
     | npn               NPN type device                         |
     | pnp               PNP type device                         |
     | is                Saturation Current                      |
     | bf                Ideal forward beta                      |
      ------------------------------------------------------------
     | nf                Forward emission coefficient            |
     | vaf               Forward Early voltage                   |
     | va                (null)                                  |
     | ikf               Forward beta roll-off corner current    |
     |-----------------------------------------------------------+
     | ik                (null)                                  |
     | ise               B-E leakage saturation current          |
     | ne                B-E leakage emission coefficient        |
     | br                Ideal reverse beta                      |
      ------------------------------------------------------------
     | nr                Reverse emission coefficient            |
     | var               Reverse Early voltage                   |
     | vb                (null)                                  |
     | ikr               reverse beta roll-off corner current    |
     |-----------------------------------------------------------+
     | isc               B-C leakage saturation current          |
     | nc                B-C leakage emission coefficient        |
     | rb                Zero bias base resistance               |
     | irb               Current for base resistance=(rb+rbm)/2  |
      ------------------------------------------------------------
     | rbm               Minimum base resistance                 |
     | re                Emitter resistance                      |
     | rc                Collector resistance                    |
     | cje               Zero bias B-E depletion capacitance     |
     |-----------------------------------------------------------+
     | vje               B-E built in potential                  |
     | pe                (null)                                  |
     | mje               B-E junction grading coefficient        |
     | me                (null)                                  |
      ------------------------------------------------------------
     | tf                Ideal forward transit time              |
     | xtf               Coefficient for bias dependence of TF   |
     | vtf               Voltage giving VBC dependence of TF     |
     | itf               High current dependence of TF           |
     |-----------------------------------------------------------+
     | ptf               Excess phase                            |
     | cjc               Zero bias B-C depletion capacitance     |
     | vjc               B-C built in potential                  |
     |                         continued                |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |      BJT - model input-output parameters - continued
     |-----------------------------------------------------------+
     | pc                (null)                                  |
     | mjc               B-C junction grading coefficient        |
     | mc                (null)                                  |
     | xcjc              Fraction of B-C cap to internal base    |
      ------------------------------------------------------------
     | tr                Ideal reverse transit time              |
     | cjs               Zero bias C-S capacitance               |
     | ccs               Zero bias C-S capacitance               |
     | vjs               Substrate junction built in potential   |
     |-----------------------------------------------------------+
     | ps                (null)                                  |
     | mjs               Substrate junction grading coefficient  |
     | ms                (null)                                  |
     | xtb               Forward and reverse beta temp. exp.     |
      ------------------------------------------------------------
     | eg                Energy gap for IS temp. dependency      |
     | xti               Temp. exponent for IS                   |
     | fc                Forward bias junction fit parameter     |
     | tnom              Parameter measurement temperature       |
     | kf                Flicker Noise Coefficient               |
     | af                Flicker Noise Exponent                  |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |            BJT - model parameters (output-only)           |
     |-----------------------------------------------------------+
     | type              NPN or PNP                              |
     | invearlyvoltf     Inverse early voltage:forward           |
     | invearlyvoltr     Inverse early voltage:reverse           |
     | invrollofff       Inverse roll off - forward              |
      ------------------------------------------------------------
     | invrolloffr       Inverse roll off - reverse              |
     | collectorconduct  Collector conductance                   |
     | emitterconduct    Emitter conductance                     |
     | transtimevbcfact  Transit time VBC factor                 |
     | excessphasefactor Excess phase fact.                      |
      ------------------------------------------------------------