Next: , Previous: Bipolar Junction Transistor, Up: Model and Device Parameters


13.4 BSIM1: Berkeley Short Channel IGFET Model

     
      ------------------------------------------------------------
     |          BSIM1 - instance parameters (input-only)         |
     |-----------------------------------------------------------+
     | ic                Vector of DS,GS,BS initial voltages     |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |         BSIM1 - instance parameters (input-output)        |
     |-----------------------------------------------------------+
     | l                 Length                                  |
     | w                 Width                                   |
     | ad                Drain area                              |
     | as                Source area                             |
      ------------------------------------------------------------
     | pd                Drain perimeter                         |
     | ps                Source perimeter                        |
     | nrd               Number of squares in drain              |
     | nrs               Number of squares in source             |
     |-----------------------------------------------------------+
     | off               Device is initially off                 |
     | vds               Initial D-S voltage                     |
     | vgs               Initial G-S voltage                     |
     | vbs               Initial B-S voltage                     |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |           BSIM1 - model parameters (input-only)           |
     |-----------------------------------------------------------+
     | nmos              Flag to indicate NMOS                   |
     | pmos              Flag to indicate PMOS                   |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |          BSIM1 - model parameters (input-output)          |
     |-----------------------------------------------------------+
     | vfb               Flat band voltage                       |
     |lvfb               Length dependence of vfb                |
     | wvfb              Width dependence of vfb                 |
     | phi               Strong inversion surface potential      |
      ------------------------------------------------------------
     | lphi              Length dependence of phi                |
     | wphi              Width dependence of phi                 |
     | k1                Bulk effect coefficient 1               |
     | lk1               Length dependence of k1                 |
     |-----------------------------------------------------------+
     | wk1               Width dependence of k1                  |
     | k2                Bulk effect coefficient 2               |
     | lk2               Length dependence of k2                 |
     | wk2               Width dependence of k2                  |
      ------------------------------------------------------------
     | eta               VDS dependence of threshold voltage     |
     | leta              Length dependence of eta                |
     | weta              Width dependence of eta                 |
     | x2e               VBS dependence of eta                   |
     | lx2e              Length dependence of x2e                |
     |                         continued                |
      ------------------------------------------------------------
     
     
      ---------------------------------------------------------------------
     |          BSIM1 - model input-output parameters - continued         |
     |--------------------------------------------------------------------+
     |wx2e           Width dependence of x2e                              |
     |x3e            VDS dependence of eta                                |
     |lx3e           Length dependence of x3e                             |
     |wx3e           Width dependence of x3e                              |
      ---------------------------------------------------------------------
     |dl             Channel length reduction in um                       |
     |dw             Channel width reduction in um                        |
     |muz            Zero field mobility at VDS=0 VGS=VTH                 |
     |x2mz           VBS dependence of muz                                |
     |--------------------------------------------------------------------+
     |lx2mz          Length dependence of x2mz                            |
     |wx2mz          Width dependence of x2mz                             |
      mus            Mobility at VDS=VDD VGS=VTH, channel length modulation
     |lmus           Length dependence of mus                             |
      ---------------------------------------------------------------------
     |wmus           Width dependence of mus                              |
     |x2ms           VBS dependence of mus                                |
     |lx2ms          Length dependence of x2ms                            |
     |wx2ms          Width dependence of x2ms                             |
     |--------------------------------------------------------------------+
     |x3ms           VDS dependence of mus                                |
     |lx3ms          Length dependence of x3ms                            |
     |wx3ms          Width dependence of x3ms                             |
     |u0             VGS dependence of mobility                           |
      ---------------------------------------------------------------------
     |lu0            Length dependence of u0                              |
     |wu0            Width dependence of u0                               |
     |x2u0           VBS dependence of u0                                 |
     |lx2u0          Length dependence of x2u0                            |
     |--------------------------------------------------------------------+
     |wx2u0          Width dependence of x2u0                             |
     |u1             VDS dependece of mobility, velocity saturation       |
     |lu1            Length dependence of u1                              |
     |wu1            Width dependence of u1                               |
      ---------------------------------------------------------------------
     |x2u1           VBS dependence of u1                                 |
     |lx2u1          Length dependence of x2u1                            |
     |wx2u1          Width dependence of x2u1                             |
     |x3u1           VDS dependence of u1                                 |
     |--------------------------------------------------------------------+
     |lx3u1          Length dependence of x3u1                            |
     |wx3u1          Width dependence of x3u1                             |
     |n0             Subthreshold slope                                   |
      ln0            Length dependence of n0
      ---------------------------------------------------------------------
     |wn0            Width dependence of n0                               |
     |nb             VBS dependence of subthreshold slope                 |
     |lnb            Length dependence of nb                              |
     |wnb            Width dependence of nb                               |
     |--------------------------------------------------------------------+
     |nd             VDS dependence of subthreshold slope                 |
     |lnd            Length dependence of nd                              |
     |wnd            Width dependence of nd                               |
     |                              continued                             |
      ---------------------------------------------------------------------
     
     
      ---------------------------------------------------------------------------
     |          BSIM1 - model input-output parameters - continued            |
     |-----------------------------------------------------------------------+
     |tox         Gate oxide thickness in um                                 |
     |temp        Temperature in degree Celsius                              |
     |vdd         Supply voltage to specify mus                              |
     |cgso        Gate source overlap capacitance per unit channel width(m)  |
      ------------------------------------------------------------------------
     |cgdo        Gate drain overlap capacitance per unit channel width(m)   |
     |cgbo        Gate bulk overlap capacitance per unit channel length(m)   |
     |xpart       Flag for channel charge partitioning                       |
     |rsh         Source drain diffusion sheet resistance in ohm per square  |
     |-----------------------------------------------------------------------+
     |js          Source drain junction saturation current per unit area     |
     |pb          Source drain junction built in potential                   |
     |mj          Source drain bottom junction capacitance grading coefficient
     |pbsw        Source drain side junction capacitance built in potential  |
      ------------------------------------------------------------------------
     |mjsw        Source drain side junction capacitance grading coefficient |
     |cj          Source drain bottom junction capacitance per unit area     |
     |cjsw        Source drain side junction capacitance per unit area       |
     |wdf         Default width of source drain diffusion in um              |
     |dell        Length reduction of source drain diffusion                 |
      ------------------------------------------------------------------------