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------------------------------------------------------------ | BSIM1 - instance parameters (input-only) | |-----------------------------------------------------------+ | ic Vector of DS,GS,BS initial voltages | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM1 - instance parameters (input-output) | |-----------------------------------------------------------+ | l Length | | w Width | | ad Drain area | | as Source area | ------------------------------------------------------------ | pd Drain perimeter | | ps Source perimeter | | nrd Number of squares in drain | | nrs Number of squares in source | |-----------------------------------------------------------+ | off Device is initially off | | vds Initial D-S voltage | | vgs Initial G-S voltage | | vbs Initial B-S voltage | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM1 - model parameters (input-only) | |-----------------------------------------------------------+ | nmos Flag to indicate NMOS | | pmos Flag to indicate PMOS | ------------------------------------------------------------ ------------------------------------------------------------ | BSIM1 - model parameters (input-output) | |-----------------------------------------------------------+ | vfb Flat band voltage | |lvfb Length dependence of vfb | | wvfb Width dependence of vfb | | phi Strong inversion surface potential | ------------------------------------------------------------ | lphi Length dependence of phi | | wphi Width dependence of phi | | k1 Bulk effect coefficient 1 | | lk1 Length dependence of k1 | |-----------------------------------------------------------+ | wk1 Width dependence of k1 | | k2 Bulk effect coefficient 2 | | lk2 Length dependence of k2 | | wk2 Width dependence of k2 | ------------------------------------------------------------ | eta VDS dependence of threshold voltage | | leta Length dependence of eta | | weta Width dependence of eta | | x2e VBS dependence of eta | | lx2e Length dependence of x2e | | continued | ------------------------------------------------------------ --------------------------------------------------------------------- | BSIM1 - model input-output parameters - continued | |--------------------------------------------------------------------+ |wx2e Width dependence of x2e | |x3e VDS dependence of eta | |lx3e Length dependence of x3e | |wx3e Width dependence of x3e | --------------------------------------------------------------------- |dl Channel length reduction in um | |dw Channel width reduction in um | |muz Zero field mobility at VDS=0 VGS=VTH | |x2mz VBS dependence of muz | |--------------------------------------------------------------------+ |lx2mz Length dependence of x2mz | |wx2mz Width dependence of x2mz | mus Mobility at VDS=VDD VGS=VTH, channel length modulation |lmus Length dependence of mus | --------------------------------------------------------------------- |wmus Width dependence of mus | |x2ms VBS dependence of mus | |lx2ms Length dependence of x2ms | |wx2ms Width dependence of x2ms | |--------------------------------------------------------------------+ |x3ms VDS dependence of mus | |lx3ms Length dependence of x3ms | |wx3ms Width dependence of x3ms | |u0 VGS dependence of mobility | --------------------------------------------------------------------- |lu0 Length dependence of u0 | |wu0 Width dependence of u0 | |x2u0 VBS dependence of u0 | |lx2u0 Length dependence of x2u0 | |--------------------------------------------------------------------+ |wx2u0 Width dependence of x2u0 | |u1 VDS dependece of mobility, velocity saturation | |lu1 Length dependence of u1 | |wu1 Width dependence of u1 | --------------------------------------------------------------------- |x2u1 VBS dependence of u1 | |lx2u1 Length dependence of x2u1 | |wx2u1 Width dependence of x2u1 | |x3u1 VDS dependence of u1 | |--------------------------------------------------------------------+ |lx3u1 Length dependence of x3u1 | |wx3u1 Width dependence of x3u1 | |n0 Subthreshold slope | ln0 Length dependence of n0 --------------------------------------------------------------------- |wn0 Width dependence of n0 | |nb VBS dependence of subthreshold slope | |lnb Length dependence of nb | |wnb Width dependence of nb | |--------------------------------------------------------------------+ |nd VDS dependence of subthreshold slope | |lnd Length dependence of nd | |wnd Width dependence of nd | | continued | --------------------------------------------------------------------- --------------------------------------------------------------------------- | BSIM1 - model input-output parameters - continued | |-----------------------------------------------------------------------+ |tox Gate oxide thickness in um | |temp Temperature in degree Celsius | |vdd Supply voltage to specify mus | |cgso Gate source overlap capacitance per unit channel width(m) | ------------------------------------------------------------------------ |cgdo Gate drain overlap capacitance per unit channel width(m) | |cgbo Gate bulk overlap capacitance per unit channel length(m) | |xpart Flag for channel charge partitioning | |rsh Source drain diffusion sheet resistance in ohm per square | |-----------------------------------------------------------------------+ |js Source drain junction saturation current per unit area | |pb Source drain junction built in potential | |mj Source drain bottom junction capacitance grading coefficient |pbsw Source drain side junction capacitance built in potential | ------------------------------------------------------------------------ |mjsw Source drain side junction capacitance grading coefficient | |cj Source drain bottom junction capacitance per unit area | |cjsw Source drain side junction capacitance per unit area | |wdf Default width of source drain diffusion in um | |dell Length reduction of source drain diffusion | ------------------------------------------------------------------------