13.17 Mos1: Level 1 MOSfet model with Meyer capacitance model
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| Mos1 - instance parameters (input-only) |
|-----------------------------------------------------------+
| off Device initially off |
| ic Vector of D-S, G-S, B-S voltages |
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| Mos1 - instance parameters (input-output) |
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| m Multiplicity
| l Length |
| w Width |
| ad Drain area |
| as Source area |
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| pd Drain perimeter |
| ps Source perimeter |
| nrd Drain squares |
| nrs Source squares |
|-----------------------------------------------------------+
| icvds Initial D-S voltage |
| icvgs Initial G-S voltage |
| icvbs Initial B-S voltage |
| temp Instance temperature |
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| Mos1 - instance parameters (output-only) |
|-----------------------------------------------------------+
| id Drain current |
| is Source current |
| ig Gate current |
| ib Bulk current |
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| ibd B-D junction current |
| ibs B-S junction current |
| vgs Gate-Source voltage |
| vds Drain-Source voltage |
|-----------------------------------------------------------+
| vbs Bulk-Source voltage |
| vbd Bulk-Drain voltage |
| dnode Number of the drain node |
| gnode Number of the gate node |
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| snode Number of the source node |
| bnode Number of the node |
| dnodeprime Number of int. drain node |
| snodeprime Number of int. source node |
|-----------------------------------------------------------+
| von |
| vdsat Saturation drain voltage |
| sourcevcrit Critical source voltage |
| drainvcrit Critical drain voltage |
| rs Source resistance |
| continued |
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| Mos1 - instance output-only parameters - continued
|-------------------------------------------------------------+
|sourceconductanceConductance of source |
|rd Drain conductance |
|drainconductance Conductance of drain |
|gm Transconductance |
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|gds Drain-Source conductance |
|gmb Bulk-Source transconductance |
|gmbs |
|gbd Bulk-Drain conductance |
|-------------------------------------------------------------+
|gbs Bulk-Source conductance |
|cbd Bulk-Drain capacitance |
|cbs Bulk-Source capacitance |
|cgs Gate-Source capacitance |
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|cgd Gate-Drain capacitance |
|cgb Gate-Bulk capacitance |
|cqgs Capacitance due to gate-source charge storage
|cqgd Capacitance due to gate-drain charge storage|
|-------------------------------------------------------------+
|cqgb Capacitance due to gate-bulk charge storage |
|cqbd Capacitance due to bulk-drain charge storage|
cqbs Capacitance due to bulk-source charge storage
|cbd0 Zero-Bias B-D junction capacitance |
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|cbdsw0 |
|cbs0 Zero-Bias B-S junction capacitance |
|cbssw0 |
|qgs Gate-Source charge storage |
|-------------------------------------------------------------+
|qgd Gate-Drain charge storage |
|qgb Gate-Bulk charge storage |
|qbd Bulk-Drain charge storage |
|qbs Bulk-Source charge storage |
|p Instaneous power |
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| Mos1 - model parameters (input-only) |
|-----------------------------------------------------------+
| nmos N type MOSfet model |
| pmos P type MOSfet model |
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| Mos1 - model parameters (input-output) |
|-----------------------------------------------------------+
| vto Threshold voltage |
| vt0 (null) |
| kp Transconductance parameter |
| gamma Bulk threshold parameter |
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| phi Surface potential |
| lambda Channel length modulation |
| rd Drain ohmic resistance |
| continued |
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| Mos1 - model input-output parameters - continued
|-----------------------------------------------------------+
| rs Source ohmic resistance |
| cbd B-D junction capacitance |
| cbs B-S junction capacitance |
| is Bulk junction sat. current |
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| pb Bulk junction potential |
| cgso Gate-source overlap cap. |
| cgdo Gate-drain overlap cap. |
| cgbo Gate-bulk overlap cap. |
|-----------------------------------------------------------+
| rsh Sheet resistance |
| cj Bottom junction cap per area |
| mj Bottom grading coefficient |
| cjsw Side junction cap per area |
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| mjsw Side grading coefficient |
| js Bulk jct. sat. current density |
| tox Oxide thickness |
| ld Lateral diffusion |
|-----------------------------------------------------------+
| u0 Surface mobility |
| uo (null) |
| fc Forward bias jct. fit param. |
| nsub Substrate doping |
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| tpg Gate type |
| nss Surface state density |
| tnom Parameter measurement temperature |
| kf Flicker noise coefficient |
| af Flicker noise exponent |
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| Mos1 - model parameters (output-only) |
|-----------------------------------------------------------+
| type N-channel or P-channel MOS |
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