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13.16 MES: GaAs MESFET model

     
      ------------------------------------------------------------
     |          MES - instance parameters (input-output)         |
     |-----------------------------------------------------------+
     | area              Area factor                             |
     | icvds             Initial D-S voltage                     |
     | icvgs             Initial G-S voltage                     |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |          MES - instance parameters (output-only)          |
     |-----------------------------------------------------------+
     |off            Device initially off                        |
     |dnode          Number of drain node                        |
     |gnode          Number of gate node                         |
     |snode          Number of source node                       |
      ------------------------------------------------------------
     |dprimenode     Number of internal drain node               |
     |sprimenode     Number of internal source node              |
     |vgs            Gate-Source voltage                         |
     |vgd            Gate-Drain voltage                          |
     |-----------------------------------------------------------+
     |cg             Gate capacitance                            |
     |cd             Drain capacitance                           |
     |cgd            Gate-Drain capacitance                      |
     |gm             Transconductance                            |
      ------------------------------------------------------------
     |gds            Drain-Source conductance                    |
     |ggs            Gate-Source conductance                     |
     |ggd            Gate-Drain conductance                      |
     |cqgs           Capacitance due to gate-source charge storage
     |-----------------------------------------------------------+
     |cqgd           Capacitance due to gate-drain charge storage|
     |qgs            Gate-Source charge storage                  |
     |qgd            Gate-Drain charge storage                   |
     |is             Source current                              |
     |                         continued                |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |     MES - instance output-only parameters - continued
     |-----------------------------------------------------------+
     | p                 Power dissipated by the mesfet          |
      -----------------------------------------------------------
      ------------------------------------------------------------
     |            MES - model parameters (input-only)            |
     |-----------------------------------------------------------+
     | nmf               N type MESfet model                     |
     | pmf               P type MESfet model                     |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |           MES - model parameters (input-output)           |
     |-----------------------------------------------------------+
     | vt0               Pinch-off voltage                       |
     | vto               (null)                                  |
     | alpha             Saturation voltage parameter            |
     | beta              Transconductance parameter              |
      ------------------------------------------------------------
     | lambda            Channel length modulation param.        |
     | b                 Doping tail extending parameter         |
     | rd                Drain ohmic resistance                  |
     | rs                Source ohmic resistance                 |
     |-----------------------------------------------------------+
     | cgs               G-S junction capacitance                |
     | cgd               G-D junction capacitance                |
     | pb                Gate junction potential                 |
     | is                Junction saturation current             |
      ------------------------------------------------------------
     | fc                Forward bias junction fit param.        |
     | kf                Flicker noise coefficient               |
     | af                Flicker noise exponent                  |
      ------------------------------------------------------------
     
     
      ------------------------------------------------------------
     |            MES - model parameters (output-only)           |
     |-----------------------------------------------------------+
     | type              N-type or P-type MESfet model           |
     | gd                Drain conductance                       |
     | gs                Source conductance                      |
     | depl_cap          Depletion capacitance                   |
     | vcrit             Critical voltage                        |
      ------------------------------------------------------------