The dc characteristics of the diode are determined by the parameters
IS and N. An ohmic resistance, RS, is
included. Charge storage effects are modelled by a transit time,
TT, and a nonlinear depletion layer capacitance which is
determined by the parameters CJO, VJ, and M.
The temperature dependence of the saturation current is defined by the
parameters EG, the energy and XTI, the saturation
current temperature exponent. The nominal temperature at which these
parameters were measured is TNOM, which defaults to the
circuit-wide value specified on the .options
control line.
Reverse breakdown is modelled by an exponential increase in the
reverse diode current and is determined by the parameters BV
and IBV (both of which are positive numbers).
Junction DC parameters
name | parameter | units | default | example | scale factor
|
BV | reverse breakdown voltage | V | infinite | 40.0
| |
IBV | current at breakdown voltage | A | 1.0e-3 | 1.0e-4
| |
IK (IKF) | forward knee current | A | 1.0e-3 | 1.0e-6
| |
IK | reverse knee current | A | 1.0e-3 | 1.0e-6
| |
IS (JS) | saturation current | A | 1.0e-14 | 1.0e-16 | area
|
JSW | Sidewall saturation current | A | 1.0e-14 | 1.0e-15 | perim.
|
N | emission coefficient | - | 1 | 1.5
| |
RS | ohmic resistance | Ohm | 0 | 100 | 1/area
|
Junction capacitance parameters
name | parameter | units | default | example | scale factor
|
CJO (CJ0) | zero-bias junction bottowall capacitance | F | 0.0 | 2pF | area
|
CJP (CJSW) | zero-bias junction sidewall capacitance | F | 0.0 | .1pF | perim.
|
FC | coefficient for forward-bias depletion bottomwall capacitance formula | - | 0.5 | -
| |
FCS | coefficient for forward-bias depletion sidewall capacitance formula | - | 0.5 | -
| |
M (MJ) | Area junction grading coefficient | - | 0.5 | 0.5
| |
MJSW | Periphery junction grading coefficient | - | 0.33 | 0.5
| |
VJ | junction potential | V | 1 | 0.6
| |
PHP | Periphery junction potential | V | 1 | 0.6
| |
TT | transit-time | sec | 0 | 0.1ns
|
Temperature effects
name | parameter | units | default | example | scale factor
|
EG | activation energy | eV | 1.11 | 1.11 Si
| |
0.69 Sbd
| |||||
0.67 Ge
| |||||
TM1 | 1st order tempco for MJ | 1/^oC | 0.0 | -
| |
TM2 | 2nd order tempco for MJ | 1/^oC^2 | 0.0 | -
| |
TNOM | parameter measurement temperature | C | 27 | 50
| |
TRS | 1st order tempco for RS | 1/^oC | 0.0 | -
| |
TRS2 | 2nd order tempco for RS | 1/^oC^2 | 0.0 | -
| |
TTT1 | 1st order tempco for TT | 1/^oC | 0.0 | -
| |
TTT2 | 2nd order tempco for TT | 1/^oC^2 | 0.0 | -
| |
XTI | saturation-current temp. exp | - | 3.0 | 3.0 pn
| |
2.0 Sbd
|
Noise modeling
name | parameter | units | default | example | scale factor
|
KF | flicker noise coefficient | - | 0
| ||
AF | flicker noise exponent | - | 1
|