13.18 Mos2: Level 2 MOSfet model with Meyer capacitance model
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| Mos2 - instance parameters (input-only) |
|-----------------------------------------------------------+
| off Device initially off |
| ic Vector of D-S, G-S, B-S voltages |
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| Mos2 - instance parameters (input-output) |
|-----------------------------------------------------------+
| m Multiplicity |
| l Length |
| w Width |
| ad Drain area |
| as Source area |
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| pd Drain perimeter |
| ps Source perimeter |
| nrd Drain squares |
| nrs Source squares |
|-----------------------------------------------------------+
| icvds Initial D-S voltage |
| icvgs Initial G-S voltage |
| icvbs Initial B-S voltage |
| temp Instance operating temperature |
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| Mos2 - instance parameters (output-only) |
|-----------------------------------------------------------+
| id Drain current |
| cd |
| ibd B-D junction current |
| ibs B-S junction current |
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| is Source current |
| ig Gate current |
| ib Bulk current |
| vgs Gate-Source voltage |
|-----------------------------------------------------------+
| vds Drain-Source voltage |
| vbs Bulk-Source voltage |
| vbd Bulk-Drain voltage |
| dnode Number of drain node |
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| gnode Number of gate node |
| snode Number of source node |
| bnode Number of bulk node |
| dnodeprime Number of internal drain node |
|-----------------------------------------------------------+
| snodeprime Number of internal source node |
| von |
| vdsat Saturation drain voltage |
| sourcevcrit Critical source voltage |
| drainvcrit Critical drain voltage |
| continued |
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| Mos2 - instance output-only parameters - continued
|-------------------------------------------------------------+
|rs Source resistance |
|sourceconductanceSource conductance |
|rd Drain resistance |
|drainconductance Drain conductance |
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|gm Transconductance |
|gds Drain-Source conductance |
|gmb Bulk-Source transconductance |
|gmbs |
|-------------------------------------------------------------+
|gbd Bulk-Drain conductance |
|gbs Bulk-Source conductance |
|cbd Bulk-Drain capacitance |
|cbs Bulk-Source capacitance |
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|cgs Gate-Source capacitance |
|cgd Gate-Drain capacitance |
|cgb Gate-Bulk capacitance |
|cbd0 Zero-Bias B-D junction capacitance |
|-------------------------------------------------------------+
|cbdsw0 |
|cbs0 Zero-Bias B-S junction capacitance |
|cbssw0 |
cqgs Capacitance due to gate-source charge storage
| |
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|cqgd Capacitance due to gate-drain charge storage|
|cqgb Capacitance due to gate-bulk charge storage |
|cqbd Capacitance due to bulk-drain charge storage|
|cqbs Capacitance due to bulk-source charge storage
|-------------------------------------------------------------+
|qgs Gate-Source charge storage |
|qgd Gate-Drain charge storage |
|qgb Gate-Bulk charge storage |
|qbd Bulk-Drain charge storage |
|qbs Bulk-Source charge storage |
|p Instantaneous power |
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| Mos2 - model parameters (input-only) |
|-----------------------------------------------------------+
| nmos N type MOSfet model |
| pmos P type MOSfet model |
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| Mos2 - model parameters (input-output) |
|-----------------------------------------------------------+
| vto Threshold voltage |
| vt0 (null) |
| kp Transconductance parameter |
| gamma Bulk threshold parameter |
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| phi Surface potential |
| lambda Channel length modulation |
| rd Drain ohmic resistance |
| rs Source ohmic resistance |
|-----------------------------------------------------------+
| cbd B-D junction capacitance |
| cbs B-S junction capacitance |
| is Bulk junction sat. current |
| pb Bulk junction potential |
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| cgso Gate-source overlap cap. |
| cgdo Gate-drain overlap cap. |
| cgbo Gate-bulk overlap cap. |
| rsh Sheet resistance |
|-----------------------------------------------------------+
| cj Bottom junction cap per area |
| mj Bottom grading coefficient |
| cjsw Side junction cap per area |
| mjsw Side grading coefficient |
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| js Bulk jct. sat. current density |
| tox Oxide thickness |
| ld Lateral diffusion |
| u0 Surface mobility |
|-----------------------------------------------------------+
| uo (null) |
| fc Forward bias jct. fit param. |
| nsub Substrate doping |
| tpg Gate type |
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| nss Surface state density |
| delta Width effect on threshold |
| uexp Crit. field exp for mob. deg. |
| ucrit Crit. field for mob. degradation |
|-----------------------------------------------------------+
| vmax Maximum carrier drift velocity |
| xj Junction depth |
| neff Total channel charge coeff. |
| nfs Fast surface state density |
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| tnom Parameter measurement temperature |
| kf Flicker noise coefficient |
| af Flicker noise exponent |
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| Mos2 - model parameters (output-only) |
|-----------------------------------------------------------+
| type N-channel or P-channel MOS |
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